MULTISCAN IDENTIFICATION OF MODELS OF PHYSICAL PROCESSES OF RELAXATION OF CAPACITY OF SEMICONDUCTOR BARRIER STRUCTURES

Krylov Vladimir; Bogachev Aleksey; Pronin Timofey; Mischenko Aleksey

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MULTISCAN IDENTIFICATION OF MODELS OF PHYSICAL PROCESSES OF RELAXATION OF CAPACITY OF SEMICONDUCTOR BARRIER STRUCTURES

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MULTISCAN IDENTIFICATION OF MODELS OF PHYSICAL PROCESSES OF RELAXATION OF CAPACITY OF SEMICONDUCTOR BARRIER STRUCTURES

Section: MODELING AND IDENTIFICATION OF NONLINEAR DYNAMIC SYSTEMS AND PROCESSES

Proceedings: CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS. PART 2

UDK 62 Инженерное дело. Техника в целом. Транспорт GRNTI 50.51 Автоматизация проектирования BBK 302 Проектирование TBK 5136 Системы автоматического проектирования

Krylov Vladimir ¹

Bogachev Aleksey ²

Pronin Timofey ³

Mischenko Aleksey ⁴

Author and publication information

Authors:

1. Vladimirskiy gosudarstvennyy universitet im. A.G. i N.G. Stoletovyh
employee
Russian Federation

2. Vladimirskiy gosudarstvennyy universitet im. A.G. i N.G. Stoletovyh
Russian Federation

3. Vladimirskiy gosudarstvennyy universitet im. A.G. i N.G. Stoletovyh
graduate student
Russian Federation

4. Vladimirskiy gosudarstvennyy universitet im. A.G. i N.G. Stoletovyh
graduate student
Russian Federation

Type:

Сonference article

DOI:

https://doi.org/10.30987/conferencearticle_5c19e6a391f660.48288909

Published:

22.12.2018

Subject area:

UDK 62 Инженерное дело. Техника в целом. Транспорт
GRNTI 50.51 Автоматизация проектирования
BBK 302 Проектирование
TBK 5136 Системы автоматического проектирования

Language:

Russian

Keywords:

deep-level transient spectroscopy (DLTS), frequency scan, multiskan

Abstract and keywords

Abstract (English):
The possibilities of simultaneous use of several frequency scans for parametric identification of models of capacitance relaxation processes of a barrier semiconductor structure are discussed.

Keywords:
deep-level transient spectroscopy (DLTS), frequency scan, multiskan

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References

1. Krylov, V.P. Kompleksnoe modelirovanie fizicheskih processov i apparatnyh preobrazovaniy v relaksacionnoy spektroskopii glubokih urovney / Krylov V.P., Bogachev A.M., Pronin T.Yu., Mischenko A.A. // Sbornik nauchnyh trudov I Mezhdunarodnoy nauchno-prakticheskoy konferencii «SAPR i modelirovanie v sovremennoy elektronike» 22-23 noyabrya 2017 g. / pod red. L.A. Potapova, A.Yu. Drakina. – Bryansk: BGTU, 2017. – S. 9 – 11.

2. Litvinov, V.G. Relaksacionnaya spektroskopiya glubokih urovney i ee primenenie dlya issledovaniya poluprovodnikovyh struktur mikro- i nanoelektroniki / Litvinov V.G., Gudzev V.V., Milovanova O.A., Rybin N.B. // Datchiki i sistemy. – 2009. – №9. – S. 71 – 78.

3. Krylov, V.P. Korrelyacionnaya obrabotka i modelirovanie processov relaksacii emkosti mikroelektronnyh bar'ernyh struktur / Krylov V.P., Bogachev A.M., Mischenko A.A., Pronin T.Yu. // V Mezhdunarodnaya nauchno-tehnicheskaya konferenciya studentov, molodyh uchenyh i specialistov "Energosberezhenie i effektivnost' v tehnicheskih sistemah", g. Tambov 4-6 iyunya 2018 g. – Tambov: TGTU. – S.136 – 137.

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